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| Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject 12A, 80V nd 00V, .250 hm, Nhannel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O04AA, O20AB) /Creator ) /DOCIN * 12A, 180V and 200V * rDS(ON) = 0.250 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB Symbol D NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1461.2 5-1 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N18 180 180 12 30 20 100 0.8 -55 to 150 300 260 RFM12N20 200 200 12 30 20 100 0.8 -55 to 150 300 260 RFP12N18 180 180 12 30 20 75 0.6 -55 to 150 300 260 RFP12N20 200 200 12 30 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1m) (Note 1). . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 180 200 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz, (Figure 9) RFM12N18, RFM12N20 RFP12N18, RFP12N20 35 130 120 105 4 1 25 100 0.250 3.0 50 200 180 160 1700 600 300 1.25 1.67 V V V A A nA V ns ns ns ns pF pF pF oC/W oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM12N18, RFP12N18 RFM12N20, RFP12N20 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 12A, VGS = 10V, (Figures 6, 7) ID = 12A, VGS = 10V VDD = 100V, ID 6A, RG = 50, RL = 16.5, VGS = 10V, (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulsed: pulse width 300s maximum, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 6A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 325 MAX 1.4 UNITS V ns 5-2 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 50 100 150 14 12 10 8 6 4 2 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 0.8 0.6 0.4 0.2 0 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC ID (MAX) CONTINUOUS 30 PULSE DURATION = 80s VGS = 10V DUTY CYCLE 2% 25 CASE TEMPERATURE TC = 25oC V = 20V GS ID, DRAIN CURRENT (A) VGS = 8V VGS = 7V VGS = 6V ID, DRAIN CURRENT (A) 10 20 15 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS (MAX) 180V RFM12N18, RFP12N18 VDSS (MAX) 200V RFM12N20, RFP12N20 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 VGS = 5V 10 5 0 0 VGS = 4V 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 7 0.1 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 40 30 25 20 15 10 125oC 5 -40oC 0 0 1 -40oC 25oC 125oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V 35 PULSE DURATION = 80s DUTY CYCLE 2% ID, DRAIN CURRENT (A) 0.6 VGS = 10V PULSE DURATION = 80s 0.5 DUTY CYCLE 2% 0.4 125oC 0.3 0.2 0.1 0 9 10 25oC -40oC 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 5 10 15 20 25 30 35 ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Typical Performance Curves Unless Otherwise Specified 2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 12A, VGS = 10V 1.2 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.1 1 0.9 0.8 0.7 0 -50 0.6 -50 (Continued) 1.3 VGS = VDS ID = 250A 1 0.5 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (oC) 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 200 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (V) VDS GATE SOURCE VOLTAGE RL = 16.67 IG(REF) = 1mA VGS = 10V 0.75BVDSS 0.50BVDSS 0.25BVDSS 0.75BVDSS 0.50BVDSS 0.25BVDSS 8 VDD = BVDSS 6 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 COSS 400 200 0 0 CRSS 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 150 VDD = BVDSS 100 4 50 2 DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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